CPH3459 Datasheet | onsemi

Features - On-resistance RDS(on)1=2.8Ω (typ) - 4V drive - Halogen free pliance - Input Capacitance Ciss=90p F (typ) - Protection Diode in Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg Value 200 20 0.5 2 1.0 150 - 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA Value 125 Unit C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Electrical Characteristics at Ta  25C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(th) g FS RDS(on)1 RDS(on)2 Conditions ID=1m A, VGS=0V VDS=200V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=0.25A ID=0.25A, VGS=10V ID=0.25A, VGS=4V min 200 Value Unit typ max 1 A 10 A 2.6...