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CPH3457 - N-Channel Power MOSFET

Key Features

  • ON-resistance RDS(on)1=73mW(typ. ).
  • 1.8V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Value 30 ±12 3 12 1.0 150 -.

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Datasheet Details

Part number CPH3457
Manufacturer onsemi
File Size 336.59 KB
Description N-Channel Power MOSFET
Datasheet download datasheet CPH3457 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1804B CPH3457 N-Channel Power MOSFET 30V, 3A, 95mΩ, Single CPH3 http://onsemi.com Features • ON-resistance RDS(on)1=73mW(typ.) • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Value 30 ±12 3 12 1.0 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.