CPH3461 Datasheet | onsemi

Features - On-Resistance RDS(on)1=5Ω (typ) - 2.5V Drive - Pb-Free, Halogen Free and Ro HS pliance - ESD Diode - Protected Gate - Low Ciss and High Speed Switching Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain to Gate Voltage Gate to Drain Voltage VDSS VGSS VDGS VGDS Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm2  0.8mm) Tj Storage Temperature Tstg Value 250 10 250 10 350 1.4 1.0 150 - 55 to +150 Unit V V V V m A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA Value 125 Unit C/W Electrical Characteristics at Ta  25C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(th) g FS RDS(on)1 RDS(on)2 Conditions ID=1m A, VGS=0V VDS=250V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=170m A ID=170m A, VGS=4.5V ID=170m A, VGS=2.5V min 250 Value Unit typ max 1 A 10...