CPH3462 Datasheet | onsemi

Features - On-resistance RDS(on)1=590mΩ (typ) - 4V drive - Halogen free pliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V- ”, so please take care when handling. - Machine Model Value 100 20 1 4 1.0 150 - 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm20.8mm) Symbol RJA Value 125 Unit C/W Electrical Characteristics at Ta  25C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(th) g FS RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1m A, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1m A VDS=10V, ID=0.5A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=20V, f=1MHz min 100 Value Unit typ max 1 A 10...