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CPH3462 - Power MOSFET

Key Features

  • On-resistance RDS(on)1=590mΩ (typ).
  • 4V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
  • ”, so please take car.

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Datasheet Details

Part number CPH3462
Manufacturer onsemi
File Size 441.23 KB
Description Power MOSFET
Datasheet download datasheet CPH3462 Datasheet

Full PDF Text Transcription for CPH3462 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CPH3462. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENA2322A CPH3462 Power MOSFET 100V, 785mΩ, 1A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)1=590mΩ (typ)  4V drive  Halogen fre...

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Features  On-resistance RDS(on)1=590mΩ (typ)  4V drive  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Value 100 20 1 4 1.0 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings ta