Datasheet4U Logo Datasheet4U.com

CPH3462 - Power MOSFET

Datasheet Summary

Features

  • On-resistance RDS(on)1=590mΩ (typ).
  • 4V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V.
  • ”, so please take car.

📥 Download Datasheet

Datasheet preview – CPH3462

Datasheet Details

Part number CPH3462
Manufacturer ON Semiconductor
File Size 441.23 KB
Description Power MOSFET
Datasheet download datasheet CPH3462 Datasheet
Additional preview pages of the CPH3462 datasheet.

📁 Similar Datasheet

  • CPH3403 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3405 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3406 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3407 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3408 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3409 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3410 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3413 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3414 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • CPH3417 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA2322A CPH3462 Power MOSFET 100V, 785mΩ, 1A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)1=590mΩ (typ)  4V drive  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Value 100 20 1 4 1.0 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Published: |