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  ON Semiconductor Electronic Components Datasheet  

CPH3459 Datasheet

Power MOSFET

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Ordering number : ENA2301A
CPH3459
Power MOSFET
200V, 3.7, 0.5A, Single N-Channel
http://onsemi.com
Features
On-resistance RDS(on)1=2.8(typ)
4V drive
Halogen free compliance
Input Capacitance Ciss=90pF (typ)
Protection Diode in
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
PW10s, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm)
Storage Temperature
Tstg
Value
200
20
0.5
2
1.0
150
55 to +150
Unit
V
V
A
A
W
C
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm20.8mm)
Symbol
RJA
Value
125
Unit
C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Electrical Characteristics at Ta 25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=200V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.25A
ID=0.25A, VGS=10V
ID=0.25A, VGS=4V
min
200
1.2
Value
Unit
typ max
V
1 A
10 A
2.6 V
0.8 S
2.8 3.7
2.9 4.1
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
August, 2014
80714HK TC-00003142/52214TKIM No.A2301-1/5


  ON Semiconductor Electronic Components Datasheet  

CPH3459 Datasheet

Power MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
CPH3459
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
See specified Test Circuit
VDS=100V, VGS=10V, ID=0.5A
IS=0.5A, VGS=0V
Value
Unit
min Typ max
90 pF
10 pF
6 pF
4 ns
3.5 ns
14 ns
45 ns
2.4 nC
0.3 nC
0.8 nC
0.82
1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Device
CPH3459-TL-W
Package
CPH3, SC-59
SOT-23, TO-236
Shipping
3,000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type:TL
Marking
TL
Electrical Connection
3
Switching Time Test Circuit
1
2
No.A2301-2/5


Part Number CPH3459
Description Power MOSFET
Maker ON Semiconductor
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CPH3459 Datasheet PDF






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