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CPH5871 - Power MOSFET

Key Features

  • Composite Type with a N-channel Sillicon MOSFET and a Schottky Barrier Diode Contained in One Package Facilitating High-density Mounting.
  • ESD Diode-Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance [MOSFET].
  • High Speed Switching [MOSFET].
  • 1.8V Drive [SBD].
  • Short Reverse Recovery Time [SBD].
  • Low Forward Voltage Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol [MOSFET] Drain to Source Voltage Gate to.

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Datasheet Details

Part number CPH5871
Manufacturer onsemi
File Size 486.66 KB
Description Power MOSFET
Datasheet download datasheet CPH5871 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CPH5871 Power MOSFET 30V, 52mΩ, 3.5A, Single N-Channel with Schottky Diode www.onsemi.com Features • Composite Type with a N-channel Sillicon MOSFET and a Schottky Barrier Diode Contained in One Package Facilitating High-density Mounting • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance [MOSFET] • High Speed Switching [MOSFET] • 1.8V Drive [SBD] • Short Reverse Recovery Time [SBD] • Low Forward Voltage Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol [MOSFET] Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (600mm2 × 0.