DTA114GE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistor
PNP Bipolar Junction Transistor with a 10 k W Base- Emitter Resistor
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance
- Junction to Ambient (1) Operating and Storage Temperature Range 1. Minimum FR- 4 or G- 10 PCB, Operating to Steady State. Symbol VCEO VCBO VEBO IC IB PD PD Rq JA Value 50 50 5.0 100 20 150 78 833
- 55 to 150 Unit V V V m A m A m W m W °C/W °C
50 Volts 100 m Amps 150 m W
3 2 1
CASE 463- 01 SOT- 416/SC- 90
COLLECTOR (3) BASE (1) RBE EMITTER (2)
RBE = 10 k W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 50 µAdc) Collector- Emitter Breakdown Voltage (IC = 1.0 m Adc)...
