• Part: ECH8419
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 216.67 KB
Download ECH8419 Datasheet PDF
onsemi
ECH8419
Features - ON-resistance RDS(on)1=13mΩ (typ.) - 4V drive - Halogen free pliance - Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 35 ±20 9 40 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-002 Top View 2.9 ECH8419-TL-H 0.15 0 to 0.02 Product & Package Information - Package : ECH8 - JEITA, JEDEC :- - Minimum Packing Quantity : 3,000 pcs./reel Packing...