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ECH8616 - N-Channel Silicon MOSFET

Key Features

  • Ultrahigh-speed switching.
  • 4V drive.
  • Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic.

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Datasheet Details

Part number ECH8616
Manufacturer onsemi
File Size 93.95 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet ECH8616 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ECH8616 Ordering number : ENN8191 N-Channel Silicon MOSFET ECH8616 General-Purpose Switching Device Applications Features • Ultrahigh-speed switching. • 4V drive. • Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Ratings 60 ±20 3 20 1.3 1.