900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

ECH8616 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

ECH8616
Ordering number : ENN8191
N-Channel Silicon MOSFET
ECH8616 General-Purpose Switching Device
Applications
Features
Ultrahigh-speed switching.
4V drive.
Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm) 1unit
Mounted on a ceramic board (900mm20.8mm)
Ratings
60
±20
3
20
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FJ
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
2.2
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
3.8 S
70 93 m
92 133 m
560 pF
60 pF
41 pF
11 ns
11 ns
61 ns
32 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
ECH8616/D


  ON Semiconductor Electronic Components Datasheet  

ECH8616 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2206B
0.3
8
5
1
0.65
2.9
4
ECH8616
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
VDS=30V, VGS=10V, ID=3A
IS=3A, VGS=0
min
Electrical Connection
Ratings
typ
12.8
2.1
2.7
0.81
max
1.2
Unit
nC
nC
nC
V
0.15
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
8765
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
1 2 3 4 8 : Drain1
Top view
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=30V
ID=1.5A
RL=20
D VOUT
ECH8616
P.G 50S
Rev.0 I Page 2 of 4 I www.onsemi.com


Part Number ECH8616
Description N-Channel Silicon MOSFET
Maker ON Semiconductor
PDF Download

ECH8616 Datasheet PDF






Similar Datasheet

1 ECH8611 P-Channel Silicon MOSFET
Sanyo Semicon Device
2 ECH8612 N-Channel Silicon MOSFET
Sanyo Semicon Device
3 ECH8613 High-Speed Switching Applications
Sanyo Semicon Device
4 ECH8615 P-Channel Silicon MOSFET
Sanyo Semicon Device
5 ECH8616 N-Channel Silicon MOSFET
Sanyo Semicon Device
6 ECH8616 N-Channel Silicon MOSFET
ON Semiconductor
7 ECH8617 P-Channel Silicon MOSFET
Sanyo Semicon Device
8 ECH8618 N-Channel Silicon MOSFET
Sanyo Semicon Device
9 ECH8619 N-Channel and P-Channel Silicon MOSFETs
Sanyo Semicon Device





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy