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  ON Semiconductor Electronic Components Datasheet  

ECH8663R Datasheet

N-Channel Power MOSFET

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Ordering number : ENA1184A
ECH8663R
N-Channel Power MOSFET
30V, 8A, 20.5mΩ, Dual ECH8
http://onsemi.com
Features
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
30
±12
8
60
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
85
ECH8663R-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TJ
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/72308PE TIIM TC-00001535 No. A1184-1/7


  ON Semiconductor Electronic Components Datasheet  

ECH8663R Datasheet

N-Channel Power MOSFET

No Preview Available !

ECH8663R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=2A, VGS=3.1V
ID=2A, VGS=2.5V
See specied Test Circuit.
VDS=10V, VGS=4.5V, ID=8A
IS=8A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=4A
RL=3.75Ω
D VOUT
Rg
ECH8663R
P.G 50Ω S
Rg=1kΩ
Ordering Information
Device
ECH8663R-TL-H
Package
ECH8
Shipping
3,000pcs./reel
min
30
Ratings
typ
0.5
5
10.5
11
12
12
8.5
15.5
16
17.5
20
320
850
4200
1800
12.3
2.4
2.8
0.75
max
1
±10
1.3
20.5
21
23
28
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
nC
nC
V
memo
Pb Free and Halogen Free
No. A1184-2/7


Part Number ECH8663R
Description N-Channel Power MOSFET
Maker ON Semiconductor
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ECH8663R Datasheet PDF






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