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  ON Semiconductor Electronic Components Datasheet  

EFC2K102ANUZ Datasheet

N-Channel MOSFET

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MOSFET – Power, Dual,
N-Channel, for 1-Cell
Lithium-ion Battery
Protection
12 V, 2.75 mW, 33 A
EFC2K102ANUZ
Overview
This Power MOSFET features a low onstate resistance. This
device is suitable for applications such as power switches of portable
machines. Best suited for 1cell lithiumion battery applications.
Features
2.5 V Drive
CommonDrain type
ESD DiodeProtected Gate
PbFree, Halogen Free and RoHS Compliance
Applications
1Cell Lithiumion Battery Charging and Discharging Switch
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
PW 10 ms, duty cycle 1%
VSSS
12
V
VGSS
±8
V
IS
33
A
ISP
135
A
Total Dissipation (Note 1)
Junction Temperature
PT
3.1
W
Tj
150
°C
Storage Temperature
Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 1)
RqJA
40.3
1. Surface mounted on ceramic substrate (5000 mm2 × 0.8 mm).
Unit
°C/W
© Semiconductor Components Industries, LLC, 2020
1
March, 2021 Rev. 0
www.onsemi.com
VSSS
12 V
RSS(on) Max
2.75 mW @ 4.5 V
2.85 mW @ 3.8 V
3.95 mW @ 3.1 V
6.1 mW @ 2.5 V
IS Max
33 A
ELECTRICAL CONNECTION
NChannel
6, 7, 9, 10
Rg
8
Rg
3
1 : Source1
2 : Source1
3 : Gate1
4 : Source1
5 : Source1
6 : Source2
7 : Source2
8 : Gate2
9 : Souce2
10 : Source2
Rg = 300 W
1, 2, 4, 5
PIN ASSIGNMENT
1
3
4
2
5
9
6
10
8
7
MARKING DIAGRAM
WLCSP10
2.98x1.49x0.1
CASE 567ZG
PW
AYWZZ G
PW
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Assembly Lot
G
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
EFC2K102ANUZ/D


  ON Semiconductor Electronic Components Datasheet  

EFC2K102ANUZ Datasheet

N-Channel MOSFET

No Preview Available !

EFC2K102ANUZ
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Value
Parameter
Symbol
Conditions
Min Typ Max Unit
Source to Source Breakdown Voltage V(BR)SSS IS = 1 mA, VGS = 0 V
Test Circuit 1 12
V
ZeroGate Voltage Source Current
ISSS
VSS = 10 V, VGS = 0 V
Test Circuit 1
1
mA
Gate to Source Leakage Current
IGSS
VGS = ±8 V, VSS = 0 V
Test Circuit 2
±1
mA
Gate Threshold Voltage
VGS(th)
VSS = 6 V, IS = 1 mA
Test Circuit 3 0.4
1.3
V
Static Source to Source OnState
Resistance
RSS(on)
IS = 5 A, VGS = 4.5 V
IS = 5 A, VGS = 3.8 V
Test Circuit 4 1.55 2.10 2.75 mW
Test Circuit 4 1.60 2.20 2.85 mW
IS = 5 A, VGS = 3.1 V
Test Circuit 4 1.65 2.40 3.95 mW
IS = 5 A, VGS = 2.5 V
Test Circuit 4 1.90 3.10 6.10 mW
TurnON Delay Time
Rise Time
td(on)
tr
VSS = 6 V, VGS = 3.8 V, IS = 5 A,
Rg = 10 kW
Test Circuit 5
20
ms
58
ms
TurnOFF Delay Time
td(off)
115
ms
Fall Time
tf
94
ms
Total Gate Charge
Qg
VSS = 6 V,VGS = 3.8 V, IS = 5 A
42
nC
Forward Source to Source Voltage
VF(SS)
IS = 3 A, VGS = 0 V
Test Circuit 7
0.75 1.20
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number EFC2K102ANUZ
Description N-Channel MOSFET
Maker ON Semiconductor
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