Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings 30
±20 8.5 34 1.5 150.