FCH043N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FCH043N60 Features

* Typ. RDS(on) = 37 mW

* 600 V @ TJ = 150°C

* Ultra Low Gate Charge (Typ. Qg = 163 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCH043N60 General Description

SUPERFET II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss,.

FCH043N60 Datasheet (414.06 KB)