Datasheet Summary
- N-Channel SuperFET® II MOSFET
April 2014
N-Channel SuperFET® II MOSFET
600 V, 75 A, 43 mΩ
Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 37 mΩ
- Ultra Low Gate Charge (Typ. Qg = 163 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)
- 100% Avalanche Tested
- RoHS pliant
Applications
- Tele / Sever Power Supplies
- Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide...
