FCH043N60 - N-Channel MOSFET

onsemi

General Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

Typ. RDS(on) = 37 mW.
600 V @ TJ = 150°C.
Ultra Low Gate Charge (Typ. Qg = 163 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 730 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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FCH043N60 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCH043N60
Manufacturer	onsemi
File Size	414.06 KB
Description	N-Channel MOSFET
Datasheet	FCH043N60 Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, SUPERFET) II 600 V, 75 A, 43 mW FCH043N60 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. Features • Typ. RDS(on) = 37 mW • 600 V @ TJ = 150°C • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.