FCH170N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FCH170N60 Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 150 mW

* Ultra Low Gate Charge (Typ. Qg = 42 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free, Halide Free and is RoHS Compliant Application

FCH170N60 General Description

SUPERFET II MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide s.

FCH170N60 Datasheet (347.81 KB)