FCH22N60N Datasheet - ON Semiconductor

N-Channel MOSFET

FCH22N60N Features

* 650 V @ TJ = 150°C

* RDS(on) = 140 mW (Typ.) @ VGS = 10 V, ID = 11 A

* Ultra Low Gate Charge (Typ. Qg = 45 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compli

FCH22N60N General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super *junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on *resis.

FCH22N60N Datasheet (391.81 KB)