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FCH25N60N Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 mW FCH25N60N.

General Description

The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

This advanced technology and precise process control provides lowest Rsp on−resistance, superior switching performance and ruggedness.

SUPREMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.

Key Features

  • RDS(on) = 108 mW (Typ. ) @ VGS = 10 V, ID = 12.5 A.
  • Ultra Low Gate Charge (Typ. Qg = 57 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 262 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free and is RoHS Compliant.

FCH25N60N Distributor & Price

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FCH25N60N N-Channel MOSFET Fairchild Semiconductor

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