FCH35N60 - N-Channel MOSFET
FCH35N60 Features
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 79 mW
* Ultra Low Gate Charge (Typ. Qg = 139 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 340 pF)
* 100% Avalanche Tested
* This is a Pb
* Free Device Applications
* Solar Inverter