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FCH35N60 - N-Channel MOSFET

Description

SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 79 mW.
  • Ultra Low Gate Charge (Typ. Qg = 139 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 340 pF).
  • 100% Avalanche Tested.
  • This is a Pb.
  • Free Device.

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Datasheet preview – FCH35N60

Datasheet Details

Part number FCH35N60
Manufacturer ON Semiconductor
File Size 408.45 KB
Description N-Channel MOSFET
Datasheet download datasheet FCH35N60 Datasheet
Additional preview pages of the FCH35N60 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) 600 V, 35 A, 98 mW FCH35N60 Description SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 139 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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