FCH35N60
FCH35N60 is N-Channel MOSFET manufactured by onsemi.
Description
SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server/tele power, FPD TV power, ATX power and industrial power applications.
Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 79 m W
- Ultra Low Gate Charge (Typ. Qg = 139 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 340 p F)
- 100% Avalanche Tested
- This is a Pb- Free Device
Applications
- Solar Inverter
- AC- DC Power Supply
.onsemi.
VDS 600 V
RDS(ON) MAX 98 m W @ 10 V
ID MAX 35 A
S N-CHANNEL MOSFET
G DS TO- 247- 3LD CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K FCH 35N60
© Semiconductor ponents Industries, LLC, 2009
April, 2021
- Rev. 3
$Y &Z &3 &K FCH35N60
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
FCH35N60/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage Gate to Source Voltage Drain...
