FCH35N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FCH35N60 Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 79 mW

* Ultra Low Gate Charge (Typ. Qg = 139 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 340 pF)

* 100% Avalanche Tested

* This is a Pb

* Free Device Applications

* Solar Inverter

FCH35N60 General Description

SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s.

FCH35N60 Datasheet (408.45 KB)