Part FCH35N60
Description N-Channel MOSFET
Category MOSFET
Manufacturer onsemi
Size 408.45 KB
FCH35N60 Datasheet (PDF) Download
onsemi
FCH35N60

Overview

  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 79 mW
  • Ultra Low Gate Charge (Typ. Qg = 139 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 340 pF)
  • 100% Avalanche Tested
  • This is a Pb-Free Device
FCH35N60 datasheet preview

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