FCHD040N65S3 Datasheet | onsemi

Description SUPERFET III MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features - 700 V @ TJ = 150°C - Typ. RDS(on) = 35.4 m W - Ultra Low Gate Charge (Typ. Qg = 136 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 1154 p F) - 100% Avalanche Tested - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Applications - Tele / Server Power Supplies - Industrial Power Supplies - UPS / Solar .onsemi. VDSS 650 V RDS(ON) MAX 40 m W @ 10 V ID MAX 65 A S POWER MOSFET G D S TO- 247AD CASE 340AL MARKING DIAGRAM FCHD040 N65S3 AYWWG © Semiconductor ponents Industries, LLC, 2018 July, 2019 - Rev.2 A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: FCHD040N65S3/D ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source...