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FCMT250N65S3 - N-Channel MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150 °C.
  • Typ RDS(on) = 210 mW.
  • Ultra Low Gate Charge (Typ. Qg = 24 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 248 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCMT250N65S3

Datasheet Details

Part number FCMT250N65S3
Manufacturer ON Semiconductor
File Size 469.69 KB
Description N-Channel MOSFET
Datasheet download datasheet FCMT250N65S3 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mW FCMT250N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. The Power88 package is an ultra−slim surface−mount package (1 mm high) with a low profile and small footprint (8x8 mm2).
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