FCP190N65S3
FCP190N65S3 is N-Channel MOSFET manufactured by onsemi.
Description
SUPERFET III MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 159 m W
- Ultra Low Gate Charge (Typ. Qg = 33 n C)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 300 p F)
- 100% Avalanche Tested
- These Devices are Pb- Free and are Ro HS pliant
Applications
- puting / Display Power Supplies
- Tele / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
.onsemi.
VDSS 650 V
RDS(ON) MAX 190 m W @ 10 V
ID MAX 17 A
S POWER MOSFET
GD S TO- 220
CASE 340AT
MARKING DIAGRAM
$Y&Z&3&K FCP 190N65S3
© Semiconductor ponents Industries, LLC, 2017
August, 2019
- Rev. 4
$Y &Z &3 &K FCP190N65S3
= ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Publication Order Number:
FCP190N65S3/D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
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