FCP190N65S3 Datasheet - ON Semiconductor

N-Channel MOSFET

FCP190N65S3 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 159 mW

* Ultra Low Gate Charge (Typ. Qg = 33 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCP190N65S3 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss.

FCP190N65S3 Datasheet (373.77 KB)