FCPF260N65F
Overview
- 700 V @ TJ = 150°C
- RDS(on) = 220 mW (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 46 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 223 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS Compliant
Datasheets by Manufacturer
- AP9563GH — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
- FCPF360N65S3R0L — onsemi — N-Channel MOSFET
- A2SHB — HAOHAI — N-Channel MOSFET