MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 15 A, 260 mW
FCPF260N65FL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET
is very suitable for the various power system for miniaturization and
higher efficiency. SUPERFET II FRFET MOSFET’s optimized
reverse recovery performance of body diode can remove additional
component and improve system reliability.
Features
• 700 V @ TJ = 150°C
• RDS(on) = 220 mW (Typ.)
• Ultra Low Gate Charge (Typ. Qg = 46 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 223 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
• Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
260 mW @ 10 V
ID MAX
15 A
D
G
S
MOSFET
GDS
TO−220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
260N65F
© Semiconductor Components Industries, LLC, 2020
December, 2020 − Rev. 0
$Y
&Z
&3
&K
FCPF260N65F
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF260N65FL1−F154/D
