FCPF260N60E Datasheet | onsemi

MOSFET - N-Channel, SUPERFET) II 600 V, 15 A, 260 m W FCPF260N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 220 m W - Ultra Low Gate Charge (Typ. Qg = 48 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 129 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - puting / Display Power Supplies - Tele / Server Power Supplies - Industrial Power Supplies - Lighting / Charger / Adapter .onsemi. VDSS 600 V RDS(ON) MAX 260 m W @ 10 V ID MAX 15 A S MOSFET GDS TO- 220F Ultra Narrow Lead CASE 221BN MARKING DIAGRAM $Y&Z&3&K FCPF 260N60E © Semiconductor ponents Industries, LLC, 2020 December, 2020 - Rev. 0 $Y &Z &3 &K...