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FCPF260N60E - N-Channel MOSFET

This page provides the datasheet information for the FCPF260N60E, a member of the FCPF260N60E-F154 N-Channel MOSFET family.

Datasheet Summary

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 220 mW.
  • Ultra Low Gate Charge (Typ. Qg = 48 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 129 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCPF260N60E

Datasheet Details

Part number FCPF260N60E
Manufacturer ON Semiconductor
File Size 204.08 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF260N60E Datasheet
Additional preview pages of the FCPF260N60E datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II 600 V, 15 A, 260 mW FCPF260N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 220 mW • Ultra Low Gate Charge (Typ. Qg = 48 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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