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FCPF260N65F - N-Channel MOSFET

This page provides the datasheet information for the FCPF260N65F, a member of the FCPF260N65FL1-F154 N-Channel MOSFET family.

Datasheet Summary

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • RDS(on) = 220 mW (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 46 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 223 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCPF260N65F
Manufacturer ON Semiconductor
File Size 235.33 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF260N65F Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 15 A, 260 mW FCPF260N65FL1-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET II FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • RDS(on) = 220 mW (Typ.) • Ultra Low Gate Charge (Typ.
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