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FCPF360N65S3R0 - N-Channel MOSFET

This page provides the datasheet information for the FCPF360N65S3R0, a member of the FCPF360N65S3R0L-F154 N-Channel MOSFET family.

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 310 mW.
  • Ultra Low Gate Charge (Typ. Qg = 18 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 173 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCPF360N65S3R0

Datasheet Details

Part number FCPF360N65S3R0
Manufacturer ON Semiconductor
File Size 258.95 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF360N65S3R0 Datasheet
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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 10 A, 360 mW FCPF360N65S3R0L-F154 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 310 mW • Ultra Low Gate Charge (Typ. Qg = 18 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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