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FCPF360N65S3R0 - N-Channel MOSFET

Download the FCPF360N65S3R0 datasheet PDF. This datasheet also covers the FCPF360N65S3R0L-F154 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 310 mW.
  • Ultra Low Gate Charge (Typ. Qg = 18 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 173 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCPF360N65S3R0L-F154-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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FCPF380N60 N-Channel MOSFET INCHANGE
FCPF380N60E N-Channel MOSFET Fairchild Semiconductor
FCPF380N65FL1 N-Channel MOSFET INCHANGE

Other Datasheets by onsemi

Part Number Description
FCPF360N65S3R0L N-Channel MOSFET
FCPF360N65S3R0L-F154 N-Channel MOSFET
FCPF380N60 N-Channel MOSFET
FCPF380N60-F152 N-Channel MOSFET
FCPF380N60-F154 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 10 A, 360 mW FCPF360N65S3R0L-F154 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 310 mW • Ultra Low Gate Charge (Typ. Qg = 18 nC) • Low Effective Output Capacitance (Typ. Coss(eff.