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FCPF380N60 - N-Channel MOSFET

This page provides the datasheet information for the FCPF380N60, a member of the FCPF380N60-F154 N-Channel MOSFET family.

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 330 mW.
  • Ultra Low Gate Charge (Typ. Qg = 30 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCPF380N60

Datasheet Details

Part number FCPF380N60
Manufacturer ON Semiconductor
File Size 188.98 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF380N60 Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 330 mW • Ultra Low Gate Charge (Typ. Qg = 30 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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