FCPF380N60 Datasheet and Specifications PDF

The FCPF380N60 is a N-Channel MOSFET.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Pins3
Height9.19 mm
Length10.36 mm
Width4.9 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFCPF380N60 Datasheet
Manufactureronsemi
Overview SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge pe.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 330 mW
* Ultra Low Gate Charge (Typ. Qg = 30 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
* 100% Avalanche Tested
* These Devices are Pb
*Free and are RoHS Compliant Applications
* Computing / Display Power Supplies
* Telecom / Server Power Su.
Part NumberFCPF380N60 Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF380N60 ·FEATURES ·With TO-220F packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot.
*With TO-220F packaging
*Low switching loss
*Ultra low gate charge
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operationz
*APPLICATIONS
*Switching applications
*DC-DC converters
*Uninterruptible power supply
*ABSOLUTE MAXIMUM RATING.
Part NumberFCPF380N60 Datasheet
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lo.
* 650 V @TJ = 150°C
* Max. RDS(on) = 380 mΩ
* Ultra low gate charge (typ. Qg = 30 nC)
* Low effective output capacitance (typ. Coss.eff = 95 pF)
* 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family th.

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