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FCPF380N60E - N-Channel MOSFET

This page provides the datasheet information for the FCPF380N60E, a member of the FCPF380N60E-F154 N-Channel MOSFET family.

Description

SUPERFET II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 320 mW.
  • Ultra Low Gate Charge (Typ. Qg = 34 nC).
  • Low Effective Output Capacitance (Typ. Coss. eff = 97 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCPF380N60E
Manufacturer ON Semiconductor
File Size 199.12 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF380N60E Datasheet
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Full PDF Text Transcription

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MOSFET – N-Channel, SUPERFET) II 600 V, 10.2 A, 380 mW FCPF380N60E-F154 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 320 mW • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.
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