FCPF380N60 Datasheet | Fairchild Semiconductor

FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features - 650 V @TJ = 150°C - Max. RDS(on) = 380 mΩ - Ultra low gate charge (typ. Qg = 30 nC) - Low effective output capacitance (typ. Coss.eff = 95 pF) - 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher...