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FCPF380N60 - N-Channel MOSFET

This page provides the datasheet information for the FCPF380N60, a member of the FCP380N60 N-Channel MOSFET family.

Description

SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provid

Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 380 mΩ.
  • Ultra low gate charge (typ. Qg = 30 nC).
  • Low effective output capacitance (typ. Coss. eff = 95 pF).
  • 100% avalanche tested.

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Datasheet Details

Part number FCPF380N60
Manufacturer Fairchild Semiconductor
File Size 311.08 KB
Description N-Channel MOSFET
Datasheet download datasheet FCPF380N60 Datasheet
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FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss.eff = 95 pF) • 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
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