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FCPF380N60 - N-Channel MOSFET

Download the FCPF380N60 datasheet PDF. This datasheet also covers the FCP380N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provid

Key Features

  • 650 V @TJ = 150°C.
  • Max. RDS(on) = 380 mΩ.
  • Ultra low gate charge (typ. Qg = 30 nC).
  • Low effective output capacitance (typ. Coss. eff = 95 pF).
  • 100% avalanche tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP380N60-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FCPF380N60E N-Channel MOSFET
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FCPF067N65S3 N-Channel MOSFET
FCPF11N60 SuperFET MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP380N60 / FCPF380N60 N-Channel MOSFET March 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss.eff = 95 pF) • 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.