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FCPF360N65S3R0L-F154 Datasheet

N-Channel MOSFET

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MOSFET – Power, N-Channel,
SUPERFET[ III, Easy Drive
650 V, 10 A, 360 mW
FCPF360N65S3R0L-F154
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 310 mW
Ultra Low Gate Charge (Typ. Qg = 18 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
360 mW @ 10 V
D
ID MAX
10 A
G
S
N-Channel MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF360
N65S3R0
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Data Code (Year & Week)
&K
= Lot
FCPF360N65S3R0 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
December, 2020 Rev. 0
Publication Order Number:
FCPF360N65S3R0LF154/D


  ON Semiconductor Electronic Components Datasheet  

FCPF360N65S3R0L-F154 Datasheet

N-Channel MOSFET

No Preview Available !

FCPF360N65S3R0LF154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
10*
Continuous (TC = 100°C)
6*
IDM
Drain Current
Pulsed (Note 1)
25*
EAS
Single Pulsed Avalanche Energy (Note 2)
40
IAS
Avalanche Current (Note 2)
2.1
EAR
Repetitive Avalanche Energy (Note 1)
0.27
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
27
W
0.22
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 2.1 A, RG = 25 W, starting TJ = 25°C.
3. ISD 5 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
4.56
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FCPF360N65S3R0L FCPF360N65S3R0
TO220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
www.onsemi.com
2


Part Number FCPF360N65S3R0L-F154
Description N-Channel MOSFET
Maker ON Semiconductor
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