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FCU900N60Z - N-Channel MOSFET

Description

SuperFET® II MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 675 V @ TJ = 150°C.
  • Typ. RDS(on) = 820 mW.
  • Ultra Low Gate Charge (Typ. Qg = 13 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 48.6 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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Datasheet preview – FCU900N60Z

Datasheet Details

Part number FCU900N60Z
Manufacturer ON Semiconductor
File Size 300.89 KB
Description N-Channel MOSFET
Datasheet download datasheet FCU900N60Z Datasheet
Additional preview pages of the FCU900N60Z datasheet.

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Full PDF Text Transcription

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FCU900N60Z MOSFET, N-Channel, SuperFET) II 600 V, 4.5 A, 900 mW Description SuperFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features • 675 V @ TJ = 150°C • Typ. RDS(on) = 820 mW • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.
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