FDB035AN06A0
FDB035AN06A0 is N-Channel MOSFET manufactured by onsemi.
- N-Channel Power Trench® MOSFET
N-Channel Power Trench® MOSFET
60 V, 80 A, 3.5 mΩ
Features
- RDS(on) = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A
Applications
- QG(tot) = 95 n C ( Typ.) @ VGS = 10 V
- Synchronous Rectification for ATX / Server / Tele PSU
- Low Miller Charge
- Battery Protection Circuit
- Low Qrr Body Diode
- Motor drives and Uninterruptible Power Supplies
- UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
D2-PAK
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 153o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 43o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25o C
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max. (Note 2) Thermal Resistance, Junction to Ambient, 1in2 copper pad area, Max.
FDB035AN06A0 60...
