FDB8870-F085 Key Features
- rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low
- Low gate charge
- High power and current handling capability
- Qualified to AEC Q101
- RoHS pliant
| Part Number | Description |
|---|---|
| FDB8832-F085 | N-Channel MOSFET |
| FDB8896-F085 | N-Channel Power MOSFET |
| FDB8030L | N-Channel MOSFET |
| FDB8441-F085 | N-Channel MOSFET |
| FDB8443-F085 | N-Channel MOSFET |