FDB8870-F085
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
- rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
- High power and current handling capability
- Qualified to AEC Q101
