FDB8870-F085 Datasheet - ON Semiconductor

N-Channel Power MOSFET

FDB8870-F085 Features

* rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A

* rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A

* High performance trench technology for extremely low rDS(ON)

* Low gate charge

* High power and current handling capability

* Qualified to AEC Q101

* RoHS Complian

FDB8870-F085 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications * DC/DC converters Fea.

FDB8870-F085 Datasheet (665.00 KB)