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FDB8870-F085 - N-Channel Power MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters Fea

Features

  • rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • Qualified to AEC Q101.
  • RoHS Compliant D GATE SOURCE TO-263AB DRAIN FDB SERIES (FLANGE) G S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to So.

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Full PDF Text Transcription

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FDB8870-F085 N-Channel PowerTrench® MOSFET FDB8870-F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4.4mΩ, VGS = 4.
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