FDBL0260N100
FDBL0260N100 is N-Channel Power MOSFET manufactured by onsemi.
FDBL0260N100 N-Channel Power Trench® MOSFET
.onsemi.
N-Channel Power Trench® MOSFET
100 V, 200 A, 2.6 mΩ
- Max RDS(on) = 2.6 mΩ at VGS = 10 V, ID = 80 A
Applications
- Max Qg(tot) = 116 n C at VGS = 10 V, ID = 80 A
- UIS Capability
- Ro HS pliant
- Industrial Motor Drive
- Industrial Power Supply
- Industrial Automation
- Battery Operated tools
- Battery Protection
- Solar Inverters
- UPS and Energy Inverters
- Energy Storage
- Load Switch
S SSS S SS G BOTTOM
MO-299A
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25°C TC = 100°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5) (Note 5) (Note 4) (Note 3)
(Note...
