n-channel mosfet.
* 1.4 A, 150 V. RDS(ON) = 425 mW @ VGS = 10 V
RDS(ON) = 475 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate Charge (8.
* DC/DC Converter
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS V.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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