FDC2612 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDC2612 Key Features
- 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Fast Switching Speed
- Low Gate Charge (8 nC Typical)
- This Device is Pb-Free, Halide Free and is RoHS pliant