FDC2612 Key Features
- 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching speed
- Low gate charge (8nC typical)
- Part: FDC2612
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 201.74 KB
Other FDC2612 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDC2612 | N-Channel MOSFET |