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FDC2612 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, POWERTRENCH) 200 V FDC2612 General.

General Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • Fast Switching Speed.
  • Low Gate Charge (8 nC Typical).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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