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FDC2612 - N-Channel MOSFET

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Key Features

  • 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • Fast Switching Speed.
  • Low Gate Charge (8 nC Typical).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Datasheet Details

Part number FDC2612
Manufacturer onsemi
File Size 301.21 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC2612 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 200 V FDC2612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 1.1 A, 200 V. RDS(ON) = 725 mW @ VGS = 10 V • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • Fast Switching Speed • Low Gate Charge (8 nC Typical) • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • DC/DC Converter DATA SHEET www.onsemi.com VDSS 200 V RDS(ON) MAX 725 mW @ 10 V ID MAX 1.