Datasheet Summary
FDC3535 P-Channel Power Trench® MOSFET
P-Channel Power Trench® MOSFET
-80 V, -2.1 A, 183 mΩ
Features
General Description
- Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
- Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS pliant
This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Load Switch
- Synchronous Rectifier
Pin 1
SuperSOTTM -6
S4...
