FDC3535 datasheet, mosfet equivalent, ON Semiconductor

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FDC3535 Features and benefits

General Description
* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
* High performance trench technol.

FDC3535 Application

* Load Switch
* Synchronous Rectifier S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ra.

FDC3535 Description

* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
* Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surfa.

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