FDC3535 Datasheet | Fairchild Semiconductor

FDC3535 P-Channel Power Trench® MOSFET P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ June 2010 Features General Description - Max r DS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A - Max r DS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A - High performance trench technology for extremely low r DS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL Tested - Ro HS pliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness. Applications - Load Switch - Synchronous Rectifier Pin 1 Super SOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings -80 ±20 -2.1 -10 37 1.6...