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FDC3535 - P-Channel MOSFET

General Description

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast sw

Key Features

  • General.

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FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ June 2010 Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.