FDC3535 Overview
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS pliant This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized...
FDC3535 Key Features
- Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
- Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Fast switching speed
- 100% UIL Tested
- RoHS pliant
