FDC3601N Description
These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are...
FDC3601N Key Features
- 1.0 A, 100 V
- Low Gate Charge (3.7 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint 72% (Smaller than
- This is a Pb-Free Device