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FDC3601N - N-Channel MOSFET

General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V.
  • Low gate charge (3.7nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low R DS(ON).
  • SuperSOTTM-6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick). D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC3601N August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • Load switch • Battery protection • Power management Features • 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V • Low gate charge (3.7nC typical) • Fast switching speed.