FDC3601N - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC3601N
Manufacturer	Fairchild Semiconductor
File Size	91.96 KB
Description	N-Channel MOSFET
Datasheet	FDC3601N Datasheet
Additional preview pages of the FDC3601N datasheet.

Product details

Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Load switch Battery protectio

Features

1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V.
Low gate charge (3.7nC typical).
Fast switching speed.
High performance trench technology for extremely low R DS(ON).
SuperSOTTM-6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick). D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.

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Published: Mar 30, 2005 |