Description
These N
Channel 100 V specified MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 1.0 A, 100 V
RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
- Low Gate Charge (3.7 nC Typical).
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint 72% (Smaller than
Standard SO.
- 8); Low Profile (1 mm Thick).
- This is a Pb.
- Free Device.
FDC3601N Datasheet
