FDC3601N
Overview
These N-Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
- 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
- Low Gate Charge (3.7 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint 72% (Smaller than Standard SO-8); Low Profile (1 mm Thick)
- This is a Pb-Free Device
