Datasheet Details
| Part number | FDC3601N |
|---|---|
| Manufacturer | onsemi |
| File Size | 328.55 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 FDC3601N Datasheet
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General Description
These N
Channel 100 V specified MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on
state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
- Low Gate Charge (3.7 nC Typical).
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 6 Package: Small Footprint 72% (Smaller than Standard SO.
- 8); Low Profile (1 mm Thick).
- This is a Pb.
- Free Device.