FDC3601N - Dual N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDC3601N
Manufacturer	ON Semiconductor
File Size	328.55 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC3601N Datasheet
Additional preview pages of the FDC3601N datasheet.

Product details

Description

These N Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance. 8 and TSSOP 8 packages are impractical.

Features

1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
Low Gate Charge (3.7 nC Typical).
Fast Switching Speed.
High Performance Trench Technology for Extremely Low RDS(ON).
SUPERSOTt.
6 Package: Small Footprint 72% (Smaller than Standard SO.
8); Low Profile (1 mm Thick).
This is a Pb.
Free Device.

📁 Similar Datasheet

FDC3612 - N-Channel MOSFET (Fairchild Semiconductor)
FDC3616N - N-Channel MOSFET (Fairchild Semiconductor)
FDC365P - P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDC3400 - Floppy Disk Hard Sector Data Handler (SMSC)
FDC3512 - N-Channel MOSFET (Fairchild Semiconductor)
FDC37B72X - 128 Pin Enhanced Super I/O Controller (SMSC Corporation)
FDC37B77X - ENHANCED SUPER I/O CONTROLLER (SMSC Corporation)
FDC37B787 - Super I/O Controller (SMSC Corporation)

Other Datasheets by ON Semiconductor

FDC3535 - P-Channel MOSFET
FDC2512 - N-Channel MOSFET
FDC2612 - N-Channel MOSFET
FDC5612 - N-Channel MOSFET
FDC5614P - 60V P-Channel MOSFET
FDC5661N - N-Channel MOSFET

Published: Dec 21, 2023 |