FDC3601N Key Features
- 1.0 A, 100 V
- Low Gate Charge (3.7 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-6 Package: Small Footprint 72% (Smaller than
- This is a Pb-Free Device
- Part: FDC3601N
- Description: Dual N-Channel MOSFET
- Manufacturer: onsemi
- Size: 328.55 KB
Other FDC3601N Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDC3601N | N-Channel MOSFET |