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FDC3601N Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, N-Channel, POWERTRENCH) 100 V Specified FDC3601N General.

General Description

These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.

Key Features

  • 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
  • Low Gate Charge (3.7 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint 72% (Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

FDC3601N Distributor & Price

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDC3601N N-Channel MOSFET Fairchild Semiconductor

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