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FDC3601N Datasheet

The FDC3601N is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDC3601N
ManufacturerFairchild Semiconductor
Overview These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low .
* 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
* Low gate charge (3.7nC typical)
* Fast switching speed.
* High performance trench technology for extremely low R DS(ON) .
* SuperSOTTM-6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick)..
Part NumberFDC3601N
DescriptionDual N-Channel MOSFET
Manufactureronsemi
Overview These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for .
* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
* Low Gate Charge (3.7 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* SUPERSOTt−6 Package: Small Footprint 72% (Smaller than Standard SO−8); Low Profile (1 mm Thick)
* This .