FDC606P datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* −6 A, −12 V
* RDS(on) = 26 mW @ VGS = −4.5 V
* RDS(on) = 35 mW @ VGS = −2.5 V
* RDS(on) = 53 mW @ VGS = −1.8 V
* Fast Switching Speed
* High Per.

Application

Features
* −6 A, −12 V
* RDS(on) = 26 mW @ VGS = −4.5 V
* RDS(on) = 35 mW @ VGS = −2.5 V
* RDS(on) = 53.

Description

This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −6 A, −12 V
* RDS(on) = 26 mW @ VGS = −4.5 V
* RDS(on) = 35 mW @ VGS = −2.5 V.

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