FDC606P
FDC606P is P-Channel MOSFET manufactured by onsemi.
Description
This P- Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
- - 6 A,
- 12 V
- RDS(on) = 26 m W @ VGS =
- 4.5 V
- RDS(on) = 35 m W @ VGS =
- 2.5 V
- RDS(on) = 53 m W @ VGS =
- 1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- This is a Pb- Free and Halide Free Device
Applications
- Battery Management
- Load Switch
- Battery Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a.)
- Pulsed
- 12
±8
- 6
- 20
Maximum Power Dissipation
(Note...
