Datasheet Summary
December 2001
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Features
- - 6 A,
- 12 V. RDS(ON) = 26 mΩ @ VGS =
- 4.5 V RDS(ON) = 35 mΩ @ VGS =
- 2.5 V RDS(ON) = 53 mΩ @ VGS =
- 1.8 V
Applications
- Battery management
- Load switch
- Battery protection
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
1 2
6 5 4
SuperSOT TM...
