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FDC606P - P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process.

It has been optimized for battery power management applications.

Key Features

  • 6 A,.
  • 12 V. RDS(ON) = 26 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 35 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 53 mΩ @ VGS =.
  • 1.8 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC606P December 2001 FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –6 A, –12 V. RDS(ON) = 26 mΩ @ VGS = –4.5 V RDS(ON) = 35 mΩ @ VGS = –2.5 V RDS(ON) = 53 mΩ @ VGS = –1.