FDC604P - P-Channel MOSFET

onsemi

General Description

This P

voltage POWERTRENCH process.

It has been optimized for battery power management applications.

Key Features

5.5 A,.
20 V. RDS(ON) = 33 mW @ VGS =.
4.5 V RDS(ON) = 43 mW @ VGS =.
2.5 V RDS(ON) = 60 mW @ VGS =.
1.8 V.
Fast switching speed.
High Performance Trench Technology for Extremely Low RDS(ON).
These Device is Pb.
Free and Halogen Free.

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FDC604P p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDC604P
Manufacturer	onsemi
File Size	331.41 KB
Description	P-Channel MOSFET
Datasheet	FDC604P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH®, Specified 1.8 V FDC604P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1.8 V • Fast switching speed • High Performance Trench Technology for Extremely Low RDS(ON) • These Device is Pb−Free and Halogen Free Applications • Battery Management • Load Switch • Battery Protection ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current − Continuous − Pulsed (Note 1a) −5.