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FDC6000NZ - Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V.
  • ESD protection diode (note 3).
  • High performance trench technology for extremely low RDS(ON).
  • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact.

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FDC6000NZ June 2004 FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features • 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.