FDC6000NZ Datasheet | Fairchild Semiconductor

Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features - 6.5 A, 20 V RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V - ESD protection diode (note 3) - High performance trench technology for extremely low RDS(ON) - FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact Applications - Battery management/Charger Application - Load switch S2 S1 G1 S2 Super SOT-6 G2 3 2 1 Bottom Drain Contact 5 6 S1 FLMP TA=25o C unless otherwise noted MOSFET Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 ±12 (Note 1a) Units 7.3 20 1.6 1.8 1.2 - 55 to +150 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJc Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case...